Abstract:We discuss the role of aluminum oxide (i.e. Al2O3 when stoichiometric) for transistors and sensors based on oxide semiconductors such as InGaZnO (IGZO) and two-dimensional (2D) semiconductors, such as monolayer MoS2. Aluminum oxide is a well-known capping and dielectric layer in semiconductor technology typically deposited by atomic-layer deposition (ALD), which offers a dense and high-quality film with low gas permeability even when deposited on flexible substrates. However, when deposited at low temperature (< 200C), aluminum oxide can include a significant amount of fixed charges and defects, which lead to unusual charge trapping and doping effects in semiconductor devices. For example, such charge trapping can cause (apparent) sub-60 mV/decade subthreshold swing at room temperature in IGZO transistors, but can also lead to potential applications in neuromorphic computing. We also discuss effective doping (~1013 cm-2) of 2D semiconductors by thin ALD-grown non-stoichiometric AlOx capping layers. This is achieved with an aluminum seed layer, which enables uniform growth of the subsequently deposited ALD film. This approach leads to a negative shift in threshold voltage, record on-state current (~700 A/m) in a monolayer semiconductor, and drastic reduction in contact resistance. Finally, we investigate the passivation effects of Al2O3 capping, which limits the interaction of the underlying semiconductors with ambient air and moisture. We demonstrate improved response in MoS2 temperature sensors and long-term stability in flexible MoS2 transistors (8 months). Further, we evaluate the effects of Al2O3 passivation on IGZO transistors after aging for 80 months.

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

A Deep-Level Transient Spectroscopy Study of Gamma-Ray Irradiation on the Passivation Properties of Silicon Nitride Layer on Silicon

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Characterization of Al2O3 surface passivation of silicon solar cells

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Modulation of Atomic-Layer-deposited Al2O3 Film Passivation of Silicon Surface by Rapid Thermal Processing

Comparative study on the effects of α/γ phase ratio on the micro-structures and properties in Al2O3 coatings under silicon ion irradiation

Gamma-Rays Irradiation - an Effective Method for Improving Light-Emission Stability of Porous Silicon

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation

Gamma-Ray Irradiation Induced Dielectric Loss of SiO 2 /Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{al}_{2}\hbox{o}_{3}$ Films

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

The characteristics of leakage current mechanisms and SILC effects of Al 2 O 3 gate dielectric