Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]o[sub 3]∕si Interfaces for Advanced Gate Stacks

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Atomic-Layer-Deposited Laalo3/Srtio3 All Oxide Field-Effect Transistors

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

The characteristics of leakage current mechanisms and SILC effects of Al 2 O 3 gate dielectric

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition