Abstract:Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x-rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al2O3 in contrast to HfO2 on SiGe; however, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al2O3/SiGe is investigated using atomic layer deposited (ALD) Al2O3 insertion into or on top of ALD HfO2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al2O3/SiGe and HfO2/SiGe interfaces with the insertion of Al2O3 into or on top of the HfO2 oxide. The data is consistent with the Al2O3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism shows that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This result shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Contactless analysis of surface passivation and charge transfer at TiO 2 –Si interface

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Charge writing at the LaAlO3/SrTiO3 surface

Surface Charge Writing and Nonvolatile Control of Superconductivity in a LaAlO3/KTaO3(111) Heterostructure

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]o[sub 3]∕si Interfaces for Advanced Gate Stacks

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

Single Layer Control of Nanoscale Metal-Insulator Transition at the LaAlO3/SrTiO3 Interface

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Engineering High- K/sige Interface with ALD Oxide for Selective GeO X Reduction.

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups