Abstract:One convenient approach to minimize the surface recombination loss in Si is to passivate the surface dangling bonds by depositing a thin TiO 2 layer on the bulk Si. Besides, the p -Si/TiO 2 interface can initiate hole-blocking and facilitate efficient electron transport through the TiO 2 layer; thereby, promoting the extraction of electrons for efficient onward utilization. In this context, the current investigation involves studying how the Ti 3+ donor states, produced by deliberately introducing O-vacancies controlled by changing the plasma pressure in the RF-magnetron sputtering chamber during the growth of the TiO 2 thin films, can change the material's Fermi level and work function and modify the band bending and band offset as well as the fixed oxide charge density in the p -Si/TiO 2 heterojunction interface. The TiO 2 / p -Si interface has been studied through capacitance-voltage (C-V) analysis to determine the interface parameters such as fixed oxide charge, the density of interface traps, and the dielectric constant of TiO 2 . The studied hole-blocking property of the interface has been correlated to the photoresponsivity of the metal-oxide-semiconductor (MOS) structure. The MOS device fabricated at a pressure of 30 mTorr displays a large saturation current (15.95 μA cm –2 ) when subjected to a positive gate bias, facilitated by the relatively low conduction band offset (ΔE C ∼0.20 eV), significant positive fixed oxide charge (+1.18 ×10 11 cm –2 ) and the interface trap density (1.03 ×10 12 cm –2 ), which enhanced the transport of minority carrier electrons from the p -Si to the metal, resulting in a good photo responsivity ∼0.158 AW –1 and photo gain of ∼37.5 under white light illumination. Optimum hole-blocking and surface passivation characteristics of the TiO 2 / p -Si interface together may facilitate fabricating improved heterojunction Si solar cells.

Contactless analysis of surface passivation and charge transfer at TiO 2 –Si interface

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Surface Passivation of Nano-Textured Fluorescent Sic by Atomic Layer Deposited Tio2

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Optimization of a Solution-Processed TiO x /(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments

Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

The impact of sputtering pressure on the TiO 2 / p -Si interface and its implications for hole-blocking and photodetection

Influence of Interface Layer on Optical Properties of Sub-20 Nm-Thick TiO2 Films

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

Surface Passivation Properties of ${\textrm{hfo}}_{2}$ Thin Film on N-Type Crystalline Si

Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{al}_{2}\hbox{o}_{3}$ Films

A Novel Passivating Electron Contact for High-Performance Silicon Solar Cells by ALD Al-doped TiO2

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

Low-temperature Ta-doped TiO x electron-selective contacts for high-performance silicon solar cells