Abstract:In the quest for ultra-high-efficiency silicon solar cells, optimising surface passivation has emerged as a critical pathway to minimise losses and enhance device performance. Recent breakthroughs in aluminium oxide (AlO x ) passivation show an interface to Si with low interface defect density and high negative charge density after activation annealing at 400–450 °C, enabling low surface recombination velocities. The formation of an interfacial SiO x layer has been recognised as a key factor. In this study, we present an in-depth investigation of a SiO x /AlO x /SiN x nanolayer stack interface with Si, where the SiO x is wet chemically grown. By varying the AlO x deposition from 5 to 40 ALD cycles, we observed a reduction in interface defect density, indicating the presence of negatively charged hydrogen in the AlO x layer. We reveal a distinctly different interface between Si and nanolayer stacks with or without AlO x . Activation annealing significantly reduced recombination losses for stacks with AlO x , attributed to increased charge density and decreased carrier capture velocity at the valence band-tail. We find lower electron capture rates in nanolayer stacks containing AlO x , suggesting effective passivation of donor states by negatively charged hydrogen. Additionally, the formation of new acceptor states was detected by an increase in hole capture velocity at the interface after annealing. Electron energy loss spectroscopy (EELS) identified an Al:SiO x N y layer of ∼2.5 nm thick with excess oxygen content and a mixture of tetrahedral and octahedral coordinated Al, likely contributing to the formation of acceptor defects and suggest an intrinsic link between the chemical and field-effect passivation.

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{al}_{2}\hbox{o}_{3}$ Films

Dual functions of anti-reflectance and surface passivation of the atomic layer deposited Al2O3 films on crystalline silicon substrates

Anti-reflection Coating at 550 Nm Fabricated by Atomic Layer Deposition

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers

Spray coated aluminum oxide thin film for P-type crystalline silicon surface passivation

Characterization of Al2O3 surface passivation of silicon solar cells

Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

Role of Annealing Conditions on Surface Passivation Properties of ALD Al2O3 Films

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

A review of Al2O3 as surface passivation material with relevant process technologies on c-Si solar cell

Research on Dual-Layer Passivation Films of the Crystalline Silicon Solar Cell

Double Layers of Ultrathin A-Si:H and SiNx for Surface Passivation of N-Type Crystalline Si Wafers

Surface Passivation Properties of ${\textrm{hfo}}_{2}$ Thin Film on N-Type Crystalline Si

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

ALD Al2O3 based nanolaminates for solar cell applications

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer