Abstract:This work introduces a stack layer of Lithium Phosphate (Li3PO4) /Titanium Dioxide (TiO2) as a new electron selective passivating contact for c‐Si solar cells. The stack achieves an impressive contact resistivity (ρc) of 0.128 mΩ cm2 on n‐type c‐Si substrates with resistivity ranging from 1 to 3 Ω cm2. Furthermore, it effectively reduces the surface recombination parameter (J0) to less than 4 fA by incorporating a 6 nm a‐Si:H(i) layer. Carrier selective contacts with passivation effects are considered to have a significant influence on the performance of crystalline silicon (c‐Si) solar cells. It is essential for electron selective contact materials to meet the requirements of ultra‐low contact resistance and excellent passivation effects. This work introduces a stack layer of Lithium Phosphate (Li3PO4) /Titanium Dioxide (TiO2) as a new electron selective passivating contact. It is found that the stack achieves an impressive contact resistivity (ρc) of 0.128 mΩ cm2 on n‐type c‐Si substrates with resistivity ranging from 1 to 3 Ω cm (14.6 mΩ cm2 for the n‐Si/a‐Si:H/Li3PO4/TiO2/Al contact). Furthermore, it effectively reduces the surface recombination parameter (J0) to less than 4 fA by incorporating a 6 nm a‐Si:H(i) layer. The characterization of the n‐Si/Li3PO4/TiO2 interface reveals that phosphorus diffusion into silicon plays a crucial role in achieving the ultra‐low contact resistivity, while the presence of PO43− groups helps in fixing hydrogen atoms to maintain the desired chemical passivation effect. Finally, a silicon heterojunction solar cell (SHJ) with a rear full‐area configuration of a‐Si:H/Li3PO4/TiO2/Al is successfully demonstrated achieving an impressive power conversion efficiency of 22.89%. The result proves the efficacy of employing hydrogen‐rich low‐work function metal oxide stacks as electron selective passivating contacts.

Optimization of a Solution-Processed TiO x /(n)c-Si Electron-Selective Interface by Pre- and Postdeposition Treatments

Self‐Diffusion Effect Assisted TiO2/Li3PO4 Electron Selective Passivating Contact in Silicon Solar Cells Approaching 23% Efficiency

Symmetric Dopant‐Free Si Solar Cells Enabled by TiOx Nanolayers: An In‐Depth Study on Bipolar Carrier Selectivity

Enhancing poly-Si contact through a highly conductive and ultra-thin TiN layer for high-efficiency passivating contact silicon solar cells

Effective Interface Pretreatment For Amorphous-Crystalline Silicon Heterojunction Solar Cells

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

A High-Quality Dopant-Free Electron-Selective Passivating Contact Made from Ultra-Low Concentration Water Solution

Contactless analysis of surface passivation and charge transfer at TiO 2 –Si interface

Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells

Pinhole-like Carriers Transport in Spin-Coating SiO2 Enabling High-Efficiency Dopant-Free Si Solar Cells

A Strategy to Optimize Nickel Oxide/Crystalline Silicon Heterocontact of HJT Solar Cells

Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application

Cost-Effective Fabrication of c-Si Solar Cell Using Transition Metal Oxides Interfaces

Enhancement of NiOx/poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells

Low-temperature Ta-doped TiOx Electron-Selective Contacts for High-Performance Silicon Solar Cells

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Charge Transport Properties of Low Temperature Solution Processable Poly(3-Hexylthiophene)/Surface Modified Tio2 Bulk Heterojunction Systems

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer