Enhancement of NiOx/poly‐Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayer

Stefan Lange,Bastian Fett,Özde S. Kabakli,David Adner,Thomas Kroyer,Shankar Bogati,Patricia S. C. Schulze,Bettina Herbig,Christian Hagendorf,Gerhard Sextl,Karl Mandel
DOI: https://doi.org/10.1002/pssa.202200882
2023-04-20
physica status solidi (a) - applications and materials science
Abstract:Nickel oxide (NiOx) is a promising hole transport material for perovskite/Si tandem solar cells. Various silicon cell architectures may be used as bottom cells. The polycrystalline (poly‐Si) p+/n+ tunnel diode is expected to be a high‐efficiency interconnection scheme between the two subcells of monolithic tandems in pin‐configuration with high thermal budget, excellent passivation properties and low contact resistivity. However, NiOx is then interfaced to poly‐Si(p+) and the chemical integrity of the interface due to the necessity of annealing treatments has to be questioned. For this purpose, we investigated the NiOx/poly‐Si contact resistivity for different annealing temperatures between 100oC and 500oC and two different NiOx deposition techniques, namely wet‐chemically applied and sputter‐deposited NiOx. Values of more than 1 Ω cm2 were obtained. The insertion of a nm‐thin metallic Ni interlayer is shown to enable a tremendous decrease of the contact resistivity of 2 to 3 orders of magnitude. The formation of NiSi2 is proven by highly‐resolved (scanning) transmission electron microscopy ((S)TEM) coupled with energy‐dispersive X‐ray spectroscopy (EDXS). This interfacial engineering approach is expected to provide an effective way of improving the contact properties and integrability of NiOx into various tandem cell processes. This article is protected by copyright. All rights reserved.
What problem does this paper attempt to address?