D-π-D Molecular Layer Electronically Bridges the NiO X Hole Transport Layer and the Perovskite Layer Towards High Performance Photovoltaics

Rongguo Xu,Xiuwen Xu,Ruixi Luo,Yu Li,Gaopeng Wang,Tongfa Liu,Ning Cai,Shihe Yang

DOI: https://doi.org/10.1016/j.jechem.2021.11.029

IF: 13.1

2021-01-01

Journal of Energy Chemistry

Abstract:Nickel oxide (NiO x ) has significant cost and stability advantages over poly[bis (4-phenyl)(2,4,6-trimethyl phenyl)amine](PTAA) for inverted p-i-n perovskite solar cells (PSCs),but the poor Ni O x /perovskite contact stemming from some reactive species at the interface led to suboptimal device performance.To solve this problem,we take a multiple donor molecule approach,using 3,3’-(4,8-bis(hexylthio)benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl)bis(10-(6-bromohexyl)-10H-phenoxazine)(BDT-POZ) as an example,to modify the Ni O x /perovskite interface.The primary goal was to reduce the under-coordinated Ni ≥3+ cations via electron transfer from the donor molecules to Ni O x ,thus mitigating the detrimental reactions between perovskite and Ni O x .Equally importantly,the hole extraction at the interface was greatly enhanced after the organic donor modification,since the hydrophobic species atop Ni O x not only enabled pinhole-free crystallization of the perovskite but also properly tuned the interfacial energy level alignment.Consequently,the PSCs with Ni O x /BDT-POZ HTL achieved a high power conversion efficiency (PCE) up to 20.16%,which compared excellently with that of the non-modified devices (17.83%).This work provides a new strategy to tackle the exacting issues that have so far impeded the development of NiO x based PSCs.