Boosting interfacial contact for the NiO x -based inverted perovskite solar cells via D-A type semiconductor

Ting Wang,Zhe Wang,Zhaolong Ma,Jiali Kang,Zhihui Wang,Xueping Zong,Song Xue

DOI: https://doi.org/10.1016/j.cej.2024.154011

IF: 15.1

2024-07-15

Chemical Engineering Journal

Abstract:Inorganic NiO x emerges as a promising hole transport material for inverted perovskite solar cells (PSCs). However, the NiO x /perovskite interface in PSCs typically faces challenges such as energy level mismatch, existence of surface defects, complex active species etc., hindering the enhancement of power conversion efficiency (PCE) and device stability for NiO x -based PSCs. Herein, it is proposed an interfacial modification strategy with a donor–acceptor type semiconductor, in which the planar tetrathienopyrrole as electron-acceptor and triphenylamine-free indeno[1,2–b]carbazole as electron-donor. When fabricated as the interlayer between perovskite and NiO x , this semiconductor effectively tunes the interfacial energy level alignment, facilitates the hole extraction/transfer, bifacially passivates the defect sites within the interface, and suppresses the detrimental reaction between perovskite and NiO x . As a result, a significantly improved fill factor and open circuit voltage is achieved, attributing a champion PCE of 19.05 % with negligible hysteresis, outstripping that with pristine NiO x (18.12 %). Moreover, after CQ37 modification, PSC maintains over 78 % of its original PCE following 2000 h at room temperature, which compares excellently with that of the pristine NiO x -based device. This study renders the promise CQ37 to address the challenging issues that have hindered the process of NiO x -based PSCs.

engineering, chemical, environmental