Abstract:In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

The characteristics of leakage current mechanisms and SILC effects of Al 2 O 3 gate dielectric

Characteristics of Leakage Current Mechanisms and SILC Effects of HfO2 Gate Dielectric

Fabrication Process and Leakage Current Conduction Mechanisms of Al2O3 Gate Dielectric Thin Films

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Electrical Properties of Al2O3 Gate Dielectrics

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiN<sub><i>x</i></sub>/PEALD-AlN Dual Gate Dielectric and <i>In-Situ</i> H<sub>2</sub>(15%)/N<sub>2</sub>(85%) Plasma Pretreatment

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

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Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Annealing Effect and Leakage Current Transport Mechanisms of High K Ternary GdAlOx Gate Dielectrics

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Study of gate-induced drain leakage (GIDL) effects in thin gate oxynitride NMONSFET's