Abstract:Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through atomic layer deposited (ALD) $Al_2O_3$, grown on $SrTiO_3$. This combination is not only a key building block of oxide electronics, but also a clean system for studying the leakage mechanisms without interfacial layers that form on most of the conventional bottom electrodes. We show how tiny differences in the deposition process can have a dramatic effect on the leakage behavior. Detailed analysis of the leakage behavior rules out Fowler-Nordheim tunneling (FNT) and thermionic emission, and leaves the trap-related mechanisms of trap-assisted tunneling (TAT) and Poole-Frenkel as the likely mechanisms. After annealing the sample in air, the currents are reduced, which is ascribed to transition from trap-based mechanism to FNT, due to the elimination of the traps. The dramatic role of the assumptions regarding the flat-band voltage used for analysis is critically discussed, and the sensitivity of the extracted parameters on this magnitude is quantitatively described. We show that field effect devices based on structures similar to those described here, should be able to modulate $>10^{13} cm^{-2}$ electrons. These results provide general guidelines for reducing and analyzing leakage currents in insulators, and highlight some of the possible approaches and pitfalls in their analysis.

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Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

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Electrical Properties of Al2O3 Gate Dielectrics

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Annealing Effect and Leakage Current Transport Mechanisms of High K Ternary GdAlOx Gate Dielectrics

Understanding Leakage Currents through $Al_2O_3$ on $SrTiO_3$

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Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiNx/PEALD-AlN Dual Gate Dielectric and In-Situ H2(15%)/N2(85%) Plasma Pretreatment

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Pulsed Laser Deposition of Aluminate YAlO 3 and LaAlO 3 Thin Films for Alternative Gate Dielectric Applications