Abstract:High-quality gate dielectric layers and high-grade interfaces between high- films and substrates are essential to achieve favorable performance and electrical stability of metal–oxide–semiconductor field effect transistors (MOSFETs). The carrier trapping behavior of the oxide layer and interface defects under different external stresses has raised concerns about the instability of the performance of II I–V compound semiconductor devices. Herein, we explore the atomic-layer-deposition (ALD) growth method of erbium oxide (Er2O3) and the fabrication of InP-based MOS capacitors. Moreover, the trapping effects of oxide layer traps and interface traps were separated using the mid-band voltage method, and the stability evolution of the ALD-derived Er2O3/InP MOS capacitors under irradiation, voltage stress, and temperature was investigated comparatively. In this work, favorable interface chemical states and optimized interface roughness in the Er2O3/InP structure achieved a low-leakage current density of /cm2 and an interface density of states of eV cm−2. The stability tests results show that irradiation mainly applied at the interface leads to the generation of defects, the capture of electrons increases, and the device performance varies; under the voltage stress primarily the electrons capture by defects inside the oxide layer shifts the flat-band voltage; high-temperature damages both the gate oxide layer and interface, and the defects primarily capture positive charges, which affects the stability considerably.

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Properties of high-k gate dielectric LaAlO3 thin films

High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

Atomic-Layer-Deposited Laalo3/Srtio3 All Oxide Field-Effect Transistors

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors*

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Study of Electrical and Physical Properties of PrxAl2−xO3 As Metal-Oxide-semiconductor Gate Dielectric

Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er2O3/InP Heterointerface

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal–oxide–semiconductor field effect transistors–low temperature electron mobility study

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices