Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Microstructure and Dielectric Properties of La 2 O 3 Doped Amorphous SiO 2 Films As Gate Dielectric Material

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Properties of high-k gate dielectric LaAlO3 thin films

Growth and characterization of Peald deposited La2O3 on SiO2/Si

Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Properties and characterization of ALD grown dielectric oxides for MIS structures

Pulsed Laser Deposition of Aluminate YAlO 3 and LaAlO 3 Thin Films for Alternative Gate Dielectric Applications

On the Current Conduction Mechanisms of Ceo2/La2o3 Stacked Gate Dielectric

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics