Abstract:Hf-aluminate (Hf-Al-O) films have been deposited directly oil n-type Si (100) substrates and Pt-coated Si substrates using the pulsed laser deposition technique with a ceramic Hf-Al-O target, respectively. The structure and electrical properties of Hf-Al-O films have been investigated by x-ray diffraction, differential thermal analysis, x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) and leakage current-voltage (J-V) measurements. The composition of films was determined as Hf1.00Al2.01O4.92, which is nearly the same as the HfO2 : Al2O3 composition from XPS detection. The amorphous structure of Hf-Al-O films remains stable up to 900 degreesC. A crystallization transformation from an amorphous phase to a polycrystalline tetragonal structure occurs with rapid thermal annealing for 3 min at 1000 degreesC. A thin interfacial layer in Hf-Al-O/n-Si was identified as a mixed compound of Hf-Al-Si-O. The amorphous Hf-Al-O film exhibits a high dielectric constant of about 16.6, determined by measuring a Pt/Hf-Al-O/Pt capacitor structure. A very small equivalent oxide thickness of 0.74 nm for a 3 min Hf-Al-O film on an n-Si substrate and a leakage current of 0.17 A cm(-2) at a 1 V gate voltage were obtained. Hf-aluminate films with high thermal stability and good electrical properties can be one of the most promising candidates for high-k gate dielectric applications.

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics

The thermal stability and electrical properties of LaErO<sub>3</sub>films as high-<i>k</i>gate dielectrics

Thermal stability and electrical properties of high-k LaErO3 films

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

Properties of high-k gate dielectric LaAlO3 thin films

Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide As High K Gate Dielectric

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films

Structural And Electrical Characterization Of Ultrathin Er2o3 Films Grown On Si(001) By Reactive Evaporation

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition