Abstract:High-quality dielectric films are indispensable for field-effect electronic devices to provide high electrical performance. However, deposition of high-quality dielectric films on flexible substrate remains a challenging task, which greatly limits the electrical performance of flexible or organic field-effect devices. A room-temperature deep ultraviolet (DUV) irradiation process is proposed for densification of solution-processed La2O3 films. It is found that room-temperature DUV-La2O3 films not only exhibit leakage and dielectric properties that are comparable to those of high-temperature annealed-La2O3 films, but also have very smooth and clean surfaces and excellent bending strain tolerance. The fabricated La2O3 films exhibit a wide band gap (5.78 eV), high dielectric constant (12.68), low leakage density (8.8 x 10(-7) A cm(-2) at 2 MV cm(-1)), and high breakdown field strength (3.5 MV cm(-1)). Organic thin-film transistors (OTFTs) based on high-quality solution-processed La2O3 gate dielectrics show a low operation voltage (<= 3 V), low gate leakage current (<10(-9) A), and high I-on/I-off ratio (>10(5)). Based on these room-temperature-fabricated high-performance OTFTs, low-voltage complementary integrated circuits are successfully fabricated, including complementary inverters and NAND gate circuits. The results demonstrate that room-temperature DUV-processed La2O3 films are ideal gate dielectric materials for future flexible and low-power-consumption electronic devices.

Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide As High K Gate Dielectric

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Ionic Liquid Gating Control of Oxygen Vacancies in the La<sub>0.8</sub>Ba<sub>0.2</sub>MnO<sub>3</sub> Ultrathin Films

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-k Layers

Oxygen incorporated solution-processed high-kappa La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Dielectric Relaxation of Lanthanum Doped Zirconium Oxide

Ternary Gd-Y-O High K Oxide Films for Next-Generation Gate Dielectrics and Their Annealing Temperature Effects

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics

Leakage Current and Dielectric Breakdown in Lanthanum Doped Amorphous Aluminum Oxide Films Prepared by Sol–gel

Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

Effect of Humidity Adsorption on Mixed Valence Dielectric Material LaFe1−xAlxO3

The thermal stability and electrical properties of LaErO<sub>3</sub>films as high-<i>k</i>gate dielectrics

Effect of Fe Impurity on Performance of La2O3 As a High K Gate Dielectric

Oxygen incorporated solution-processed high-<i>κ</i> La<sub>2</sub>O<sub>3</sub> dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Hysteresis In Lanthanide Aluminum Oxides Observed By Fast Pulse Cv Measurement

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials