Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Effects of Magnetic-Field Annealing on the Morphology and Magnetic Properties of La 0.7 Sr 0.3 MnO 3 Film

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Effect of post-annealing on the structure and dielectric property of La2Ti2O7 thin film

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

The Effect of Si Surface Nitridation on the Interfacial Structure and Electrical Properties of (la2o3)0.5(sio2)0.5 High-K Gate Dielectric Films

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics

The Effect of Annealing Temperatures on the Microstructure of La0.5ca0.5mno3 Films

Effect of Nh3 and N-2 Annealing on the Interfacial and Electrical Characteristics of La2o3 Films Grown on Fully Depleted Sige-On-Insulator Substrates

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition