Abstract:Hf-aluminate (Hf-Al-O) films have been deposited directly oil n-type Si (100) substrates and Pt-coated Si substrates using the pulsed laser deposition technique with a ceramic Hf-Al-O target, respectively. The structure and electrical properties of Hf-Al-O films have been investigated by x-ray diffraction, differential thermal analysis, x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) and leakage current-voltage (J-V) measurements. The composition of films was determined as Hf1.00Al2.01O4.92, which is nearly the same as the HfO2 : Al2O3 composition from XPS detection. The amorphous structure of Hf-Al-O films remains stable up to 900 degreesC. A crystallization transformation from an amorphous phase to a polycrystalline tetragonal structure occurs with rapid thermal annealing for 3 min at 1000 degreesC. A thin interfacial layer in Hf-Al-O/n-Si was identified as a mixed compound of Hf-Al-Si-O. The amorphous Hf-Al-O film exhibits a high dielectric constant of about 16.6, determined by measuring a Pt/Hf-Al-O/Pt capacitor structure. A very small equivalent oxide thickness of 0.74 nm for a 3 min Hf-Al-O film on an n-Si substrate and a leakage current of 0.17 A cm(-2) at a 1 V gate voltage were obtained. Hf-aluminate films with high thermal stability and good electrical properties can be one of the most promising candidates for high-k gate dielectric applications.

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