Abstract:The thermal stability of high-K dielectrics on Si is critical in avoiding the malfunction of metal oxide field effect transistors（MOSFET） in devices.Series of annealing experiments have been performed to investigate the thermal stability of atomic layer deposited（ALD） lanthanum aluminate（LAO） thin films,a promising amorphous high-K candidate.The abrupt interface between LAO and Si remains intact at temperatures below 600 C.Above this temperature,a SiO 2 -rich interfacial layer begins to appear and thickens at higher temperatures.At900 ℃,the interface is roughened due to the formation of nano sized crystal nuclei above the interfacial layer,which indicates the interfacial reactions with the Si substrate.The thermal stability of ALD Al 2 O 3 thin films on Si have also been studied under similar conditions.The Al 2 O 3 /Si interface retains its smoothness even after full crystallization.This comparison suggests that the rare earth element may catalyze the interfacial reactions.Further annealing experiments on LAO films with different thickness and with a capping layer show that the oxygen source of the interfacial layer mainly comes from the ALD oxide films.

Characteristics of LaAlO3/Si(100) Deposited under Various Oxygen Pressures

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Properties of high-k gate dielectric LaAlO3 thin films

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Interfacial structures of LaAlO 3 films on Si(100) substrates

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

Pulsed Laser Deposition of Aluminate YAlO 3 and LaAlO 3 Thin Films for Alternative Gate Dielectric Applications

Effects of Oxygen Pressure on La3Ga5SiO14 Thin Films Grown by Pulsed Laser Deposition

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Microstructure and Dielectric Properties of La 2 O 3 Doped Amorphous SiO 2 Films As Gate Dielectric Material

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)