Abstract:Two kinds of Zr-rich Zr-aluminate films for high-kappa gate dielectric applications with the nominal composition of (ZrO2)(0.8)(Al2O3)(0.2) and (ZrO2)(0.9)(Al2O3)(0.1), were deposited on n-type silicon wafer by pulsed laser deposition (PLD) technique at different deposition conditions. X-ray diffraction (XRD) reveals that the (ZrO2)(0.8)(Al2O3)(0.2) film could remain amorphous after being rapid thermal annealed (RTA) at the temperature above 800 degrees C, while the other one displays some crystalline peaks at 700 degrees C. The energy gap calculated from optical transmittance spectrum of (ZrO2)(0.8)(Al2O3)(0.2) film on quartz is about 6.0 eV. Sputtering depth profile of X-ray photoelectron spectroscopy and Auger electron spectroscopy indicate that a Zr-Si-O interfacial layer was formed at the near surface of the silicon substrate. The dielectric constant of the (ZrO2)(0.8)(Al2O3)(0.2) film has been determined to be 22.1 by measuring a Pt/(ZrO2)(0.8)(Al2O3)(0.2)/Pt MIM structure. An EOT of 1.76 nm with a leakage current density of 51.5 mA/cm(2) at 1 V gate voltage for the film deposited in N-2 were obtained. Two different pre-treatments of Si substrates prior to depositions were also carried out and compared. The results indicate that a surface-nitrided Si substrate can lead to a lower leakage current density. The amorphous Zr-rich Zr-aluminate films fabricated by PLD have promising structure and dielectric properties required for it candidate material for high-kappa Late dielectric applications. (c) 2005 Elsevier B.V. All rights reserved.

Investigation of High-Quality Ultra-Thin Laalo3, Films As High-K Gate Dielectrics

Structure And Dielectric Properties Of Amorphous Laalo3 And Laaloxny Films As Alternative Gate Dielectric Materials

Properties of high-k gate dielectric LaAlO3 thin films

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

The Thermal Stability And Electrical Properties Of Laero(3) Films As High-K Gate Dielectrics

Interfacial Structure and Electrical Properties of LaAlO 3 Gate Dielectric Films on Si by Metalorganic Chemical Vapor Deposition

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

Characteristics of LaAlO3/Si(100) Deposited under Various Oxygen Pressures

Thermal Stability Of Laalo3/Si Deposited By Laser Molecular-Beam Epitaxy

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

The thermal stability and electrical properties of LaErO<sub>3</sub>films as high-<i>k</i>gate dielectrics

Fabrication and Characterization of Zr-Rich Zr-Aluminate Films for High-Kappa Gate Dielectric Applications

An investigation into ultra-thin pseudobinary oxide (TiO 2 ) x (Al 2 O 3 ) 1-x films as high- k gate dielectrics

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Pulsed Laser Deposition of Aluminate YAlO 3 and LaAlO 3 Thin Films for Alternative Gate Dielectric Applications

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Oxygen incorporated solution-processed high-kappa La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Growth and Characteristics of La2o3 Gate Dielectric Prepared by Low Pressure Metalorganic Chemical Vapor Deposition