Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

Effect of NH3and N2annealing on the Interfacial and Electrical Characteristics of La2O3films Grown on Fully Depleted SiGe-on-insulator Substrates

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

The Effect of Si Surface Nitridation on the Interfacial Structure and Electrical Properties of (la2o3)0.5(sio2)0.5 High-K Gate Dielectric Films

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Electrical Properties of Ge MOS Capacitors with La2O3 Gate Dielectric Annealed in Different Gases

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Effects of NH3 Annealing on Interface and Electrical Properties of Gd-doped HfO2/Si Stack

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface