Abstract:Bipolar junction transistors (BJTs) are generally employed in spacecraft, due to their current drive capability, linearity and excellent matching characteristics. High-energy particles and cosmic rays in space environment remarkably affect electronic devices, especially in BJTs producing total ionizing dose, displacement damage or single event effect. Among them, ionizing irradiation effects on BJTs dominates. For BJTs, ionization damage can induce the oxide trapped charges in SiO2 layer and interface traps in Si/SiO2, resulting in more recombination base current and the degradation of current gain. Consequently, the accumulation of both oxide charges and interface traps causes an increase in the base current. Passivation layer is also an important factor of the irradiation effects of BJTs. Previous works only studied the degradation of electrical properties of the devices with/without passivation layer induced by irradiation, and did not give an influence mechanisms of passivation layer on the irradiation respond of devices. Therefore, the irradiation damage mechanisms of the BJTs with or without nitride passivation layer are not clear so far. In this paper, the impact of Si3N4 passivation layer on ionizing irradiation damage on lateral PNP bipolar transistors (LPNP) was studied by using Co-60 gamma irradiation source. The KEITHLEY 4200-SCS semiconductor parameter analyzer was used to measure the relationship between the electrical properties of LPNP transistors and ionization dose, including the Gummel characteristics, the degradation of current gain, etc. The irradiation defects of the LPNP transistors with/without passivation layer structure were analyzed by the deep level transient spectroscopy (DLTS). The experimental results show that the electrical properties of the LPNP transistors with and without passivation layer exhibit similar characteristics. For all samples, the base current increases with increasing the total dose, while the collector current does not almost change. Compared with the LPNP transistors without Si3N4 passivation layer, the degradation of LPNP transistor with Si3N4 passivation layer is severe. Based on the excess base current as a function of base-emitter voltage for the LPNP transistors with/without nitride passivation layer, the degradation of bipolar transistors with nitride passivation layer is severe under the same irradiation conditions. The DLTS analyses show that compared with the bipolar transistors without nitride passivation layer, the signal peak located at about 300 K is shifted to low temperature for the bipolar transistors with nitride passivation layer. The above results show that the LPNP transistors with nitride passivation could produce a large number of interface states with the energy level is closer to the middle of the forbidden band during the irradiation, which is attributed to a large number of hydrogen presence during the processing of fabricated passivation layer.

A Deep-Level Transient Spectroscopy Study of Gamma-Ray Irradiation on the Passivation Properties of Silicon Nitride Layer on Silicon

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

PASSIVATION EFFECT OF SiNx: H FILM ON CRYSTALLINE SILICON MATERIALS AND SOLAR CELLS

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Gamma-Rays Irradiation - an Effective Method for Improving Light-Emission Stability of Porous Silicon

Enhanced passivation and stability of negative charge injected SiN x with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Quantitative Analysis of the Degradation Behavior of Silicon Solar Cell Irradiated by 1 MeV Electron Beams Using Photocarrier Radiometry Combined with Lock-in Carrierography

Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors

Passivation Property of -Si：h/sinx Stack-Layer Film in Crystalline Silicon Solar Cells

Gamma-Ray Irradiation Induced Dielectric Loss of SiO 2 /Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Study of irradiation damage in silicon at different scales

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Research on Dual-Layer Passivation Films of the Crystalline Silicon Solar Cell

Negatively Charged Silicon Nitride Films for Improved P-Type Silicon Surface Passivation by Low-Temperature Rapid Thermal Annealing

Radiation Effects on the Low Frequency Noise in Partially Depleted Silicon on Insulator Transistors

Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell under Low-Energy (< 200 Kev) Proton Irradiation