Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Ellipsometry study on silicon nitride film with uneven thickness distribution by plasma-enhanced chemical vapor deposition

PASSIVATION EFFECT OF SiNx: H FILM ON CRYSTALLINE SILICON MATERIALS AND SOLAR CELLS

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Microstructure and Photoelectric Properties of P-Doped Silicon-Rich Sinx Film As an N-Type Layer for Pin-Type Amorphous Silicon Thin Film Solar Cells

Research on Nitride Membranes Grown by PECVD

A Comparison of Structures and Properties of SiNx and SiOx Films Prepared by PECVD

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

Research Progress in SiN for Multicrystalline Silicon Solar Cells

Investigation of in situ grown P-doped nc-SiOx: H thin film as the n layer for the application of thin film solar cell

Microcrystalline silicon carbide window layers in thin film silicon solar cells

Role of SiN x Barrier Layer on the Performances of Polyimide Ga₂O₃-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Performance investigation of silicon nitride (SiNx) layer doped with twin thin films of gallium and zinc oxide for solar cell

Processing and Characterisation of PECVD Silicon Nitride Films

Improved PECVD SixNy film as a mask layer for deep wet etching of the silicon

Optimization of PECVD silicon oxynitride films for anti-reflection coating

Advanced PECVD Processes for SiNW Based Solar Cells and Thin Film Transistors

Microstructures and Optical Properties of SiNx Films