Abstract:Surface passivation of n-type Crystalline Silicon wafer using thin dielectric films is an important and major factor in improving photovoltaic performance of HIT solar cells. In this study, Numerical simulation was carried out by using AFORS-HET simulation software in which energy band diagram with and without surface passivation (a-Si:H(i)) was investigated and the highest conduction band offset obtained on n type c-Si wafer is 0.85 eV which is comparatively higher than p-type c-Si wafer which was reported between 0.1 and 0.15 eV. Performance of HIT solar cell with passivation layer is simulated and obtained efficiency of 12.9% by incorporating actual conditions to compare with experimentally obtained data. It has been understood that applying an effective dielectric passivation of silicon surface resulted with high open circuit voltage (Voc) and low surface recombination lead to an increase of cell efficiency by 1.1% (from 11.8 to 12.9%). Also, the simulated results shows that to obtain good conversion efficiency Defect density of interface (Dit) should be lower than 1x1011 cm−2eV−1.Validation of the simulation results is done by conducting PECVD experiments for optimizing the amorphous silicon passivation to a layer thickness down to 15 nm. HIT Solar cells have been developed, using the optimum layer of passivation, and their performance have been studied. An improvement in the minority charge carrier lifetime of ~53 µs (from 215 to 268 μs) and on the other hand reduction in the surface recombination velocity of ~ 12.9 cm/s (from 65.11 cm/s down to 52.23 cm/s) has been achieved through passivation which effectively increased the open circuit voltage (Voc) from 0.690 to 0.705 V. In this preliminary study, a conversion efficiency of 11.3% of heterojunction with intrinsic thin layer (HIT) solar cell on 10 mm × 10 mm n-c-Si wafer has been obtained.

PASSIVATION EFFECT OF SiNx: H FILM ON CRYSTALLINE SILICON MATERIALS AND SOLAR CELLS

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Passivation Property of -Si：h/sinx Stack-Layer Film in Crystalline Silicon Solar Cells

Influence of contact characteristics of SnO2/P on fill factor of solar cell

Microcrystalline Silicon‐carbon Alloys As Anti‐reflection Window Layers in High Efficiency Thin Film Silicon Solar Cells

Research Progress in SiN for Multicrystalline Silicon Solar Cells

Microcrystalline silicon carbide window layers in thin film silicon solar cells

Passivation of textured crystalline silicon with small pyramids by silicon nitride films formed by catalytic chemical vapor deposition and phosphorus catalytic impurity doping

Surface Passivation Studies of n-type Crystalline Silicon for HIT Solar Cells

Microstructure and Photoelectric Properties of P-Doped Silicon-Rich Sinx Film As an N-Type Layer for Pin-Type Amorphous Silicon Thin Film Solar Cells

Si Surface Passivation By Siox:H Films Deposited By A Low-Frequency Icp For Solar Cell Applications

A Deep-Level Transient Spectroscopy Study of Gamma-Ray Irradiation on the Passivation Properties of Silicon Nitride Layer on Silicon

A Study on the Application of Thin Film Passivation and Crystalline Silicon Solar Cells Using PECVD Process

Tuning Back Side Passivation for Enhancing the Performance of PERC Solar Cells

Role of SiN x Barrier Layer on the Performances of Polyimide Ga₂O₃-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

Performance investigation of silicon nitride (SiNx) layer doped with twin thin films of gallium and zinc oxide for solar cell

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Enhanced Device Performance of Si Nanowires/si Nanocrystals Heterojunction Solar Cells with Ultrathin Al2O3 Passivation

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Material Properties of Nanocrystalline Silicon Carbide for Transparent Passivating Contact Solar Cells

Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emitters