Abstract:p-Type hydrogenated silicon carbide (p-SiC:H) films were prepared using plasma-enhanced chemical vapor deposition by systematically incorporating carbon into nanocrystalline silicon networks. The carbon content of the films was varied by adjusting the methane/silane (CH4/SiH4; R-c) ratio. The chemical bonding, micro structural, and electro-optical properties of the films were investigated in detail. With increasing R-c,R-, the silicon carbon bond density in the films increased gradually and the overall microstructure became amorphous. Through sophisticated control of the carbon content of the films during high hydrogen dilution deposition, p-type hydrogenated nanocrystalline SiC:H (p-nc-SiC:H) films with nanometer-scale Si crystallites embedded in an amorphous SiC:H matrix were obtained. The p-nc-SiC:H films had wide bandgaps larger than 2 eV and reduced parasitic light absorption at wavelengths below 550 nm. When using wide-bandgap p-nc-SiC:H films with superior electro-optical properties as window layers in n-i-p flexible and p-i-n semi-transparent nc-Si:H solar cells, in place of conventional p-nc-Si:H layers with narrow bandgaps, enhanced cell performance was achieved because of both high open circuit voltage (V-oc) and high quantum efficiency values at short wavelengths of 350-550 nm. The conversion efficiencies of the flexible nc-Si:H solar cells increased from 6.37% (V-oc = 0.41 V, J(sc) = 22.81 mA/cm(2), and FF = 68.10%, where Jsc is the short-circuit current density and FF is the fill factor, respectively) to 7.89% (Voc = 0.51 V, J(sc) = 24.04 mA/cm(2), and FF = 64.37%). A further increase in the conversion efficiency to 9.18% was obtained by inserting a very thin, highly-doped p-nc-SiC:H buffer layer between a low-doped p-nc-SiC:H window layer and an indium tin oxide front contact. A significant increase in the conversion efficiency from 3.66% (V-oc = 0.42 V, J(sc) = 14.83 mA/cm(2), and FF = 58.69%) to 4.33% (V-oc = 0.45 V, J(sc) = 17.74 mA/cm(2), and FF = 54.18%) was achieved with the semi-transparent nc-Si:H solar cell, with an average optical transmittance of 17.29% in the visible wavelength region of 500-800 nm.

Material Properties of Nanocrystalline Silicon Carbide for Transparent Passivating Contact Solar Cells

Microcrystalline silicon carbide window layers in thin film silicon solar cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Influence of contact characteristics of SnO2/P on fill factor of solar cell

Microcrystalline Silicon‐carbon Alloys As Anti‐reflection Window Layers in High Efficiency Thin Film Silicon Solar Cells

A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Microcrystalline Silicon Thin Film Solar Cells with Microcrystalline Silicon Carbide Window Layers and Silicon Absorber Layers Both Prepared by Hot‐Wire CVD

Wide-bandgap Nanocrystalline Silicon-Carbon Alloys for Photovoltaic Applications

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells

Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Transparent Conductive Oxide Sputtering Damage on Contact Passivation in Silicon Heterojunction Solar Cells with Hydrogenated Nanocrystalline Silicon

Conductive Hole-Selective Passivating Contacts for Crystalline Silicon Solar Cells

Progress and Future Prospects of Wide‐Bandgap Metal‐Compound‐Based Passivating Contacts for Silicon Solar Cells

Temperature and Environmental Stable Titanium Carbide as Electron-Selective Heterocontact for Crystalline Silicon Solar Cells

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Deposition of Boron-Doped Nanocrystalline Silicon Carbide Thin Films Using H2-Ar Mixed Dilution for the Application on Thin Film Solar Cells