Abstract:The design and preparation of conventional optical films are mainly limited by the refractive indices of available materials. Here, a simple-operation antireflection coatings (ARCs) design method was developed based on the tailored refractive index characteristics of thin-film materials. High-transmittance, broadband (400–800 nm), three-layer single- and double-sided ARCs with tailored refractive indices and transmittances of 99.2% and 98.5%, respectively, were designed. The sensitivity of the ARCs system was simulated, which predicts the variable range of the transmittance affected by the random manufacturing errors in the refractive index (±0.5%) and film thickness (±2.5%) of each layer. The ARCs consisted of nonstoichiometric silicon oxynitride and silicon nitride films formed on glass substrates by PECVD techniques. The crystallite state, relative atomic concentration, and Si-centered tetrahedral phase Si–Si 4-(ν+η) O ν N η of each layer were determined. The morphology images of top and cross-section views and elemental mapping of ARCs were displayed. The designed and measured transmittances were compared; the average transmittance deviations of the single- and double-sided amorphous ARCs over the visible were 0.1% and 0.4%, respectively, which show good agreement. Furthermore, the reproducibility, repeatability, and stability of PECVD were evaluated. These results are detail discussed and are expected to serve as a reference for the preparation of optical films formed via PECVD.

Optimization of PECVD silicon oxynitride films for anti-reflection coating

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Anti-reflection Coating at 550 Nm Fabricated by Atomic Layer Deposition

Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition

The Variation of Physical Properties of Plasma‐Deposited Silicon Nitride and Oxynitride with Their Compositions

Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Design and preparation of high-transmittance broadband antireflection coatings with tailored refractive indices deposited by PECVD

Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides

A Comparison of Structures and Properties of SiNx and SiOx Films Prepared by PECVD

Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics

Facet Antireflection Coatings Deposited by PECVD

Tuning the peak position of subwavelength silica nanosphere broadband antireflection coatings.

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

SiOx(C)/SiNx Dual-Layer Anti-Reflectance Film Coating for Improved Cell Efficiency

Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD