Abstract:The advances in novel low-loss "on insulator" integrated photonics platforms beyond silicon, such as thin-film LiNbO3, LiTaO3, GaP and BaTiO3 have demonstrated major potential across a wide range of applications, due to their unique electro-optical or nonlinear optical properties. This has heralded novel devices, ranging from low-voltage and high-speed modulators to parametric amplifiers. For such photonic integrated circuits, a low-loss SiO2 cladding layer is a key element, serving as a passivation layer for the waveguides and enabling efficient fiber-to-chip coupling. However, numerous novel ferroelectric or III-V "on insulator" platforms have low tolerances for process temperature. This prohibits using high-temperature anneals to remove hydrogen, a common impurity that is inherent to ordinary chemical vapor deposited SiO2 and causes significant optical loss in the near infrared. Here, we satisfy the dichotomy of a low-loss wafer scale manufactured SiO2 cladding and low processing temperature. Inspired by the manufacturing of optical fibers, we introduce a hydrogen-free, low-loss SiO2 cladding that is deposited at low temperatures (300 degrees Celsius) by using SiCl4 and O2 as precursors in inductively coupled plasma-enhanced chemical vapor deposition (ICPCVD). By replacing hydrogenous silicon precursors (e.g. SiH4) with SiCl4, the deposited film is inherently free from residual hydrogen. The process temperature is compatible with the "on insulator" platforms and CMOS electronic integrated circuits. We demonstrate a wide low-loss window that covers all telecommunication bands from 1260 nm to 1625 nm. We achieve a < 2.5 dB/m waveguide loss at 1550 nm, comparable with 1200 degree Celsius annealed films. Our SiCl4 process provides a key future cladding for all recently emerged "on-insulator" photonics platforms, that is low cost, scalable in manufacturing, and directly foundry compatible.

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics

Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Inhomogeneous dielectrics grown by plasma-enhanced chemical vapor deposition

Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Study of Silicon-on-glass Waveguides

Anneal-free ultra-low loss silicon nitride integrated photonics

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Silicon Oxy-Nitride for the Low Refractive Index Layers in the Mirror Coatings of the Cryogenic Laser Interferometer Gravitational Waves Detector

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Design and Fabrication of a TE-pass Polarizer Based on Silicon Nitride Optical Waveguide

Visible to Near-Infrared Light Integrated Photonic Components on PECVD and LPCVD SiN Platform

High confinement, high yield Si3N4 waveguides for nonlinear optical application

Optimization of PECVD silicon oxynitride films for anti-reflection coating

Hydrogen-free low-temperature silica for next generation integrated photonics