Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Anneal-free ultra-low loss silicon nitride integrated photonics

Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides

Study of Silicon-on-glass Waveguides

The Variation of Physical Properties of Plasma‐Deposited Silicon Nitride and Oxynitride with Their Compositions

Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Optimization of PECVD silicon oxynitride films for anti-reflection coating

Growth and characterization of silicon nitride films for optoelectronics applications

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

High-quality amorphous Silicon Carbide for hybrid photonic integration at low temperature

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Thin films of silicon nitride deposited at room temperature by non-reactive magnetron sputtering: radiofrequency power and deposition time influence on the formation of α-Si3N4 and its optical properties

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

Deposition and characterization of SiON films using HMDS for photonics applications