Facet Antireflection Coatings Deposited by PECVD

张立江,熊兵,王健,孙长征,钱可元,罗毅
DOI: https://doi.org/10.3969/j.issn.1001-5868.2004.05.014
2004-01-01
Abstract:A simple method to make antireflection (AR) coatings on semiconductor laser facets using plasma enhanced chemical vapor deposition (PECVD) is proposed.Key parameters of single-layer AR coating,including the refractive index n and the layer thickness h,are designed.The tolerances of n and h to maintain a power reflectivity less than 10~(-3) have been determined to be Δn = ±0.04 and Δh = ±6 nm, respectively.AR coating with reflectivity of 6.8×10~(-4) has been demonstrated using SiN_x film deposited by PECVD.The reflectivity is accurately measured.An AR-coated 1.31 μm InGaAsP superluminescent diode with oxide stripe structure has been successfully developed.
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