Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enhanced chemical vapor deposition

He Yuan,Sun Chang-Zheng,Xu Jian-Ming,Qing Wu,Bing Xiong,Yi Luo
DOI: https://doi.org/10.7498/aps.59.7239
2010-01-01
Abstract:The design and fabrication of multilayer antireflection (AR) coating based on plasma enhanced chemical vapor deposition (PECVD) is studied for its applications in optoelectronic devices. Deposition conditions for obtaining SiO 2/SiN x thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiN x. Four-layer SiO 2/SiN x AR coating is designed to exhibit a reflectivity of less than 10 -4 over 70 nm bandwidth. Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5 × 10 -4 when the thickness deviation of any single layer is within ±5 nm from the designed value. Based on the simulation results, SiO 2/SiN x multilayer AR coating is deposited on the end facet of a Fabry-Perot laser. By analyzing the output spectra of the laser, the residual reflectivity of the AR coating is determined to be on the order of 10 -4 over the wavelength range of 1535-1565 nm. © 2010 Chin.Phys.Soc.
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