Abstract:Surface passivation by double layers made of hydrogenated amorphous silicon (a-Si:H) and hydrogenated silicon nitride (SiNx) on float zone n-type Si substrates was investigated. The thickness of the a-Si:H layers was varied from 0 to 4nm and they were deposited at low temperature by plasma-enhanced chemical vapour deposition. The structure and composition of the double layers was determined by a combination of spectroscopic ellipsometry and glow discharge optical emission spectroscopy. The minority carrier effective lifetime and the uniformity of the surface passivation of the wafers were measured by calibrated photoluminescence imaging. The lifetime was observed to increase with increasing a-Si:H thickness. An excellent lifetime value of 7.3ms was measured on the double layers with an a-Si:H layer thickness of 3.4nm, corresponding to surface recombination velocity below 2cm/s. Capacitance-voltage and conductance-voltage measurements were used to determine the densities of fixed charge and interface states at the interface between the Si substrate and the a-Si:H/SiNx stacks. The fixed charge density of the initial SiNx was positive, as expected. However, the overall fixed charge density of the double layers was observed to decrease when a layer of a-Si:H was inserted beneath the SiNx, and eventually reaches negative values when the a-Si:H thickness exceeds 2nm. The conductance-voltage measurements revealed that the interface state density (Dit) is significantly lowered when adding the ultrathin a-Si:H film between the substrate and the SiNx layer, providing a significant improvement of the chemical passivation, thus reducing the overall surface recombination velocity.

Negatively Charged Silicon Nitride Films for Improved P-Type Silicon Surface Passivation by Low-Temperature Rapid Thermal Annealing

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Improved Surface Passivation of Rear SiN x /AlO x Stacks in p-Type Boron-Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Improved Surface Passivation of Rear SiN X /alo X Stacks in P‐type Boron‐Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al 2 O 3 Thin Films Grown by Atomic Layer Deposition

Thermal Acceptor Formation in Nitrogen-Doped Silicon

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

OPTICAL AND ELECTRICAL PROPERTIES OF ANNEALING SiNx: H THIN FILM

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Double Layers of Ultrathin A-Si:H and SiNx for Surface Passivation of N-Type Crystalline Si Wafers

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Passivation of textured crystalline silicon with small pyramids by silicon nitride films formed by catalytic chemical vapor deposition and phosphorus catalytic impurity doping

Activation and Deactivation of Silicon Surface Passivation by Niobium Oxide Films

PASSIVATION EFFECT OF SiNx: H FILM ON CRYSTALLINE SILICON MATERIALS AND SOLAR CELLS