Abstract:Bulk lifetime studies of crystalline silicon wafers, e.g. with the aim of studying the light-induced degradation and regeneration behavior, require low-temperature surface passivation schemes that do not alter the silicon bulk properties, e.g. through hydrogenation. Aluminum oxide (Al2O3) can provide an excellent and stable surface passivation, however, in order to achieve the best possible surface passivation, an annealing step at ∼400°C is typically required, which has been found to alter the bulk properties of some silicon materials. Hence, in this contribution we examine the possibility of passivating the silicon surface using Al2O3 layers that have seen a much lower thermal budget. We demonstrate that we are able to achieve an excellent silicon surface passivation using atomic-layer-deposited Al2O3 with measured effective surface recombination velocities Seff as low as 1.3 cm/s without exceeding a temperature of 250°C. We are able to achieve such excellent low-temperature passivation by applying a post-deposition annealing step at 250°C in combination with the deposition of negative Corona charges on the Al2O3 surface. For samples annealed at only 220°C, we still reach very low Seff values of 2 cm/s after deposition of negative Corona charges. We demonstrate that the Corona-charged low-temperature Al2O3 passivation shows only a slight degradation from an Seff of 1.6 cm/s to an Seff of 5 cm/s after 218 days of storage. Even without any post-deposition anneal and only negative Corona charges deposited, we achieve stable Seff values of 15 cm/s. As an alternative to Corona charging, a short exposure to intense UV light (λ = 395 nm) also significantly improves the surface passivation quality of low-temperature-annealed Al2O3-passivated silicon samples. However, the best surface passivation for the latter method is limited to an Seff value of 6.6 cm/s, which is still quite reasonable for bulk lifetime studies.

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al 2 O 3 Thin Films Grown by Atomic Layer Deposition

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Passivation of textured crystalline silicon with small pyramids by silicon nitride films formed by catalytic chemical vapor deposition and phosphorus catalytic impurity doping

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Role of Annealing Conditions on Surface Passivation Properties of ALD Al2O3 Films

Double Layers of Ultrathin A-Si:H and SiNx for Surface Passivation of N-Type Crystalline Si Wafers

Negatively Charged Silicon Nitride Films for Improved P-Type Silicon Surface Passivation by Low-Temperature Rapid Thermal Annealing

Effective Passivation of Black Silicon Surfaces via Plasma‐Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al2O3

Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

Dual functions of anti-reflectance and surface passivation of the atomic layer deposited Al2O3 films on crystalline silicon substrates

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{al}_{2}\hbox{o}_{3}$ Films

Optimization of the Surface Structure on Black Silicon for Surface Passivation

Enhanced passivation and stability of negative charge injected SiN x with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Passivation with sputtered silicon nitride and modified heat treatment for lifetime improvement

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon

Research on Dual-Layer Passivation Films of the Crystalline Silicon Solar Cell