Abstract:Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compared to PERC, the utilization of n-type wafers with an n-type contact at the back and a p-type diffused boron emitter has become the industry standard in 2024. In this work, variations of this technology are explored, considering p-type passivating contacts on p-type Si wafers formed via a rapid thermal processing (RTP) step. These contacts could be useful in conjunction with n-type contacts for realizing solar cells with passivating contacts on both sides. Here, a particular focus is set on investigating the influence of the applied thermal treatment on the interfacial silicon oxide (SiOx) layer. Thin SiOx layers formed via ultraviolet (UV)-O3 exposure are compared with layers obtained through a plasma treatment with nitrous oxide (N2O). This process is performed in the same plasma enhanced chemical vapor deposition (PECVD) chamber used to grow the Si-based passivating layer, resulting in a streamlined process flow. For both oxide types, the influence of the RTP thermal budget on passivation quality and contact resistivity is investigated. Whereas the UV-O3 oxide shows a pronounced degradation when using high thermal budget annealing (T > 860 °C), the N2O-plasma oxide exhibits instead an excellent passivation quality under these conditions. Simultaneously, the contact resistivity achieved with the N2O-plasma oxide layer is comparable to that yielded by UV-O3-grown oxides. To unravel the mechanisms behind the improved performance obtained with the N2O-plasma oxide at high thermal budget, characterization by high-resolution (scanning) transmission electron microscopy (HR-(S)TEM), X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) is conducted on layer stacks featuring both N2O and UV-O3 oxides after RTP. A breakup of the UV-O3 oxide at high thermal budget is observed, whereas the N2O oxide is found to maintain its structural integrity along the interface. Furthermore, chemical analysis reveals that the N2O oxide is richer in oxygen and contains a higher amount of nitrogen compared to the UV-O3 oxide. These distinguishing characteristics can be directly linked to the enhanced stability exhibited by the N2O oxide under higher annealing temperatures and extended dwell times.

Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells

SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

A Deep-Level Transient Spectroscopy Study of Gamma-Ray Irradiation on the Passivation Properties of Silicon Nitride Layer on Silicon

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al 2 O 3 Thin Films Grown by Atomic Layer Deposition

Enhanced passivation and stability of negative charge injected SiN x with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Si Surface Passivation By Siox:H Films Deposited By A Low-Frequency Icp For Solar Cell Applications

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Plasma enhanced chemical vapor‐deposited SiOx(Ny)/n‐type polysilicon on oxide passivating contacts in industrial back‐contacted Si solar cells

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

Growth Rate and Characterization of Silicon Oxide Films Grown in N 2 O Atmosphere in a Rapid Thermal Processor

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films