Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Effective Passivation of Black Silicon Surfaces via Plasma‐Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Optimization of the Surface Structure on Black Silicon for Surface Passivation

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

Passivation of textured crystalline silicon with small pyramids by silicon nitride films formed by catalytic chemical vapor deposition and phosphorus catalytic impurity doping

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Enhanced Photovoltaic Performance of Inverted Pyramid-Based Nanostructured Black-Silicon Solar Cells Passivated by an Atomic-Layer-Deposited Al2o3 Layer

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al 2 O 3 Thin Films Grown by Atomic Layer Deposition

Improved Surface Passivation by Wet Texturing, Ozone‐Based Cleaning, and Plasma‐Enhanced Chemical Vapor Deposition Processes for High‐Efficiency Silicon Heterojunction Solar Cells

Improved Surface Passivation of Rear SiN x /AlO x Stacks in p-Type Boron-Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Multi‐Carrier Generation in Organic‐Passivated Black Silicon Solar Cells with Industrially Feasible Processes

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Study of Black Silicon Wafer through Wet Chemical Etching for Parametric Optimization in Enhancing Solar Cell Performance by PC1D Numerical Simulation

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Si Surface Passivation By Siox:H Films Deposited By A Low-Frequency Icp For Solar Cell Applications