Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Saman Sharbaf Kalaghichi,Jan Hoß,Jonathan Linke,Stefan Lange,Jürgen H. Werner
DOI: https://doi.org/10.3390/en17061319
IF: 3.2
2024-03-09
Energies
Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.
energy & fuels
What problem does this paper attempt to address?
The paper aims to address the issue of electrical performance degradation of boron-doped passivating contact layers (p++-poly-Si/SiO2) in high-efficiency solar cells during high-temperature annealing. Specifically: 1. **Stability of High-Concentration Boron Doping**: Laser activation technology can achieve high-concentration boron doping beyond the solubility limit of silicon, but this high concentration may degrade during subsequent high-temperature processes (such as annealing, oxidation, etc.). The authors studied the effect of annealing at different temperatures on boron doping concentration and found significant degradation in the range of 750°C to 900°C. 2. **Surface Passivation Quality**: Although high-concentration boron doping can improve conductivity, it reduces the passivation effect during high-temperature annealing. To achieve high-quality passivation, annealing is usually required at temperatures above 800°C. However, this treatment leads to a decrease in the conductivity of the boron-doped layer. To solve the above problems, the authors proposed a three-step process: 1. **Laser Activation**: First, achieve high-concentration boron doping through laser activation. 2. **High-Temperature Annealing**: Then, perform annealing at a higher temperature to improve passivation quality. 3. **Laser Re-activation**: Finally, use a second laser treatment to restore conductivity while maintaining good passivation effects. Experimental results show that after annealing at 985°C, samples treated with re-activation exhibit high sheet resistance conductivity (Gsh = 24 mS sq) and high open-circuit voltage (iVOC = 715 mV), thus demonstrating the potential of this method in the preparation of high-efficiency solar cells.