Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Passivation properties of tunnel oxide layer in passivated contact silicon solar cells

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell

Impact of Boron Doping Concentration on Tunnel Oxide Passivated Contact in Front Surface for N-Type Poly-Si Based Passivated Contact Bifacial Solar Cells

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells

Current status and challenges for hole-selective poly-silicon based passivating contacts

Silicon‐based passivating contacts: The TOPCon route

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods

Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device

Phosphorus-diffused polysilicon contacts for solar cells

Conductive Hole-Selective Passivating Contacts for Crystalline Silicon Solar Cells

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts