Abstract:We study the preparation of high-quality p-type tunnel oxide passivated contact (p-TOPCon) using plasma-enhanced chemical vapor deposition (PECVD) technology in this work. We propose to use different plasmas to treat the ultrathin SiOx to improve the passivation quality of p-TOPCon. Experimentally, we use the nitric acid oxidation (NAOS) SiOx as the precursor and use pure N2, pure H2, and N2O/H2 plasmas to treat the SiOx precursor layer. Three observations are found. 1) Pure H2 plasma treatment can improve the SiOx quality by increasing the Si4+ content, but the passivation quality is not improved because of the etching effect of H2 plasma and the reduction of SiOx thickness. 2) The pure N2O plasma can improve the passivation quality but increases the contact resistivity (ρ c ) because of the increase of the SiOx thickness. 3) The N2O/H2 plasma treatment improves the passivation quality more effectively than pure N2O plasma, and meanwhile, it also keeps the contact resistivity at an acceptable value for high-efficiency solar cells. We assume that the atomic H provides the energy to etch the weak and dangling bonds and make SiOx thinner, while the atomic O that makes SiOx thickness unchanged balances the etching effect of atomic H. With the optimized N2O/H2 plasma treatment, the passivation quality of p-TOPCon is improved, featuring the best implied open-circuit voltage (iV oc) of ∼732 mV and the lowest single-sided saturation current density (J 0,s ) of ∼6 fA/cm2 on the lifetime sample with the n-type silicon substrate and the AlOx/SiNx capping layer. These results demonstrate that the plasma treatment is a promising way to boost the passivation quality of PECVD p-TOPCon structures. Finally, as an example, we use numerical simulation to predict the performances of the solar cells integrating the p-TOPCon structure on the rear side of n-c-Si and demonstrate a 24.8% efficiency with the p-TOPCon whose SiOx is improved by the optimized plasma treatment.

Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages

24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon

Progress of plated metallization for industrial bifacial TOPCon silicon solar cells

Plasma Treatment for Chemical SiOx Enables Excellent Passivation of P-Type Polysilicon Passivating Contact Featuring the Lowest J0 Of-6 Fa/cm2

Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2

Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells

Passivating Contact with Phosphorus‐Doped Polycrystalline Silicon‐Nitride with an Excellent Implied Open‐Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Simulation of Silicon Solar Cells with Passivation Contact of Tunnel Oxide Layer

Optimizing Phosphorus-Doped Polysilicon in TOPCon Structures Using Silicon Oxide Layers to Improve Silicon Solar Cell Performance

Development of TOPCon tunnel-IBC solar cells with screen-printed fire-through contacts by laser patterning

Silicon‐based passivating contacts: The TOPCon route

Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thickness: Gains and Possibilities in Comparison to Screen Printing

Unraveling the Passivation Mechanisms of C-Si/Siox/Poly-Si Contacts

Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion