Abstract:Passivating contact solar cells have gradually become the mainstream cell technology due to their excellent performance, and further improving the conversion efficiency has become a focus of subsequent research. Typically, achieving excellent field-effect passivation and low contact resistivity in doped polycrystalline silicon (poly-Si) solar cells requires heavy phosphorus doping. However, this approach can lead to a predicament where excessive phosphorus diffuses into the Si substrate during annealing, causing recombination losses. To address this challenge, a tandem passivation contact structure incorporating an intrinsic amorphous silicon (a-Si ( i)) film within the passivation layers is introduced to retard the diffusion of phosphorus into the Si substrate. Comprehensive characterizations of the tandem structure were carried out to delve into the underlying mechanisms of films with the integrated a-Si ( i) layer, including simulations, surface microscopy, active dopants profiling, crystallographic structure, chemical bonding, elemental distribution, and electrical properties. Simulations revealed that the inserted intrinsic layer effectively counteracts the clustering of phosphorus atoms, leading to a more even distribution during crystal growth. Furthermore, active dopant profiles indicate the potential of the introduced a-Si ( i) layer to tailor the in-diffused dopant profile. Microscopy investigations revealed the occurrence of blistering when the a-Si ( i) thickness exceeds 30 nm. Passivation and contact performances of TOPCon solar cells were assessed as the a-Si ( i) thickness was varied. Notably, optimal electrical properties were achieved with 20 nm a-Si ( i) thickness. At this thickness, the implied open-circuit voltage ( iV) of the hydrogenated lifetime sample was promoted to more than 736.6 mV on the polished wafer, corresponding to the lowest single-side saturation current density ( J) of 4.3 fA/cm . In addition, a low contact resistivity of 1.4 mΩ·cm was achieved. Based on this tandem passivation contact structure, industrial-sized TOPCon solar cells were fabricated, giving an average efficiency of 23.83%, 0.25% higher than that of the baseline counterparts on the production line. The above results demonstrate the role of the a-Si ( i) film as a buffer layer, retarding the diffusion of phosphorus into the Si substrate and obtaining a better passivation effect. This enables us to further tailor the doping profile for high-efficiency solar cells. Our work thus highlights a promising strategy to improve the performance of TOPCon solar cells and showcases its potential for implementation in industrial manufacturing.

Progress of plated metallization for industrial bifacial TOPCon silicon solar cells

Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thickness: Gains and Possibilities in Comparison to Screen Printing

Direct Contact Electroplating Sequence Without Initial Seed Layer for Bifacial TOPCon Solar Cell Metallization

Thermal laser separation and high-throughput layer deposition for edge passivation for TOPCon shingle solar cells

Development of TOPCon tunnel-IBC solar cells with screen-printed fire-through contacts by laser patterning

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

Mechanical and Electrical Properties of Ni-Ag Metallized TOPCon Silicon Solar Cells Structured by Green Picosecond Laser

Enhancing industrialization TOPCon solar cell efficiency via comprehensive anti-reflection passivation film optimization

Novel Tandem Passivated Contact Approach for High-Efficiency Industrial TOPCon Solar Cells

TOPCon shingle solar cells: Thermal laser separation and passivated edge technology

Study on selective emitter fabrication through an innovative pre‐diffusion process for enhanced efficiency in TOPCon solar cells

Mass production of crystalline silicon solar cells with polysilicon‐based passivating contacts: An industrial perspective

Silicon‐based passivating contacts: The TOPCon route

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

High-efficiency n-TOPCon bifacial solar cells with selective poly-Si based passivating contacts

Intense pulsed light in back end processing of solar cells with passivating contacts based on amorphous or polycrystalline silicon layers

An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Process development and integration of double-side Poly-Si passivated solar cells with printed contacts via LPCVD and ex-situ tube diffusion

Atomic scale controlled tunnel oxide enabled by a novel industrial tube‐based PEALD technology with demonstrated commercial TOPCon cell efficiencies > 24%