Abstract:Passivating contact solar cells have gradually become the mainstream cell technology due to their excellent performance, and further improving the conversion efficiency has become a focus of subsequent research. Typically, achieving excellent field-effect passivation and low contact resistivity in doped polycrystalline silicon (poly-Si) solar cells requires heavy phosphorus doping. However, this approach can lead to a predicament where excessive phosphorus diffuses into the Si substrate during annealing, causing recombination losses. To address this challenge, a tandem passivation contact structure incorporating an intrinsic amorphous silicon (a-Si ( i)) film within the passivation layers is introduced to retard the diffusion of phosphorus into the Si substrate. Comprehensive characterizations of the tandem structure were carried out to delve into the underlying mechanisms of films with the integrated a-Si ( i) layer, including simulations, surface microscopy, active dopants profiling, crystallographic structure, chemical bonding, elemental distribution, and electrical properties. Simulations revealed that the inserted intrinsic layer effectively counteracts the clustering of phosphorus atoms, leading to a more even distribution during crystal growth. Furthermore, active dopant profiles indicate the potential of the introduced a-Si ( i) layer to tailor the in-diffused dopant profile. Microscopy investigations revealed the occurrence of blistering when the a-Si ( i) thickness exceeds 30 nm. Passivation and contact performances of TOPCon solar cells were assessed as the a-Si ( i) thickness was varied. Notably, optimal electrical properties were achieved with 20 nm a-Si ( i) thickness. At this thickness, the implied open-circuit voltage ( iV) of the hydrogenated lifetime sample was promoted to more than 736.6 mV on the polished wafer, corresponding to the lowest single-side saturation current density ( J) of 4.3 fA/cm . In addition, a low contact resistivity of 1.4 mΩ·cm was achieved. Based on this tandem passivation contact structure, industrial-sized TOPCon solar cells were fabricated, giving an average efficiency of 23.83%, 0.25% higher than that of the baseline counterparts on the production line. The above results demonstrate the role of the a-Si ( i) film as a buffer layer, retarding the diffusion of phosphorus into the Si substrate and obtaining a better passivation effect. This enables us to further tailor the doping profile for high-efficiency solar cells. Our work thus highlights a promising strategy to improve the performance of TOPCon solar cells and showcases its potential for implementation in industrial manufacturing.

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design

Industrial TOPCon solar cells on n-type quasi-mono Si wafers with efficiencies above 23%

Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion

High-efficiency n-TOPCon bifacial solar cells with selective poly-Si based passivating contacts

Selective tunnel oxide passivated contact on the emitter of large-size n-type TOPCon bifacial solar cells

Mass production of crystalline silicon solar cells with polysilicon‐based passivating contacts: An industrial perspective

An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells

Development of TOPCon tunnel-IBC solar cells with screen-printed fire-through contacts by laser patterning

Novel Tandem Passivated Contact Approach for High-Efficiency Industrial TOPCon Solar Cells

Process development and integration of double-side Poly-Si passivated solar cells with printed contacts via LPCVD and ex-situ tube diffusion

27.6% Perovskite/c‐Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells

Progress of plated metallization for industrial bifacial TOPCon silicon solar cells

Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Influence of rear surface pyramid base microstructure on industrial n-TOPCon solar cell performances

Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells

Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

22.13% Efficient Industrial P-Type Mono Perc Solar Cell