Abstract:Passivating contact solar cells have gradually become the mainstream cell technology due to their excellent performance, and further improving the conversion efficiency has become a focus of subsequent research. Typically, achieving excellent field-effect passivation and low contact resistivity in doped polycrystalline silicon (poly-Si) solar cells requires heavy phosphorus doping. However, this approach can lead to a predicament where excessive phosphorus diffuses into the Si substrate during annealing, causing recombination losses. To address this challenge, a tandem passivation contact structure incorporating an intrinsic amorphous silicon (a-Si ( i)) film within the passivation layers is introduced to retard the diffusion of phosphorus into the Si substrate. Comprehensive characterizations of the tandem structure were carried out to delve into the underlying mechanisms of films with the integrated a-Si ( i) layer, including simulations, surface microscopy, active dopants profiling, crystallographic structure, chemical bonding, elemental distribution, and electrical properties. Simulations revealed that the inserted intrinsic layer effectively counteracts the clustering of phosphorus atoms, leading to a more even distribution during crystal growth. Furthermore, active dopant profiles indicate the potential of the introduced a-Si ( i) layer to tailor the in-diffused dopant profile. Microscopy investigations revealed the occurrence of blistering when the a-Si ( i) thickness exceeds 30 nm. Passivation and contact performances of TOPCon solar cells were assessed as the a-Si ( i) thickness was varied. Notably, optimal electrical properties were achieved with 20 nm a-Si ( i) thickness. At this thickness, the implied open-circuit voltage ( iV) of the hydrogenated lifetime sample was promoted to more than 736.6 mV on the polished wafer, corresponding to the lowest single-side saturation current density ( J) of 4.3 fA/cm . In addition, a low contact resistivity of 1.4 mΩ·cm was achieved. Based on this tandem passivation contact structure, industrial-sized TOPCon solar cells were fabricated, giving an average efficiency of 23.83%, 0.25% higher than that of the baseline counterparts on the production line. The above results demonstrate the role of the a-Si ( i) film as a buffer layer, retarding the diffusion of phosphorus into the Si substrate and obtaining a better passivation effect. This enables us to further tailor the doping profile for high-efficiency solar cells. Our work thus highlights a promising strategy to improve the performance of TOPCon solar cells and showcases its potential for implementation in industrial manufacturing.

Study on selective emitter fabrication through an innovative pre‐diffusion process for enhanced efficiency in TOPCon solar cells

Optimization of efficiency enhancement of TOPCon cells with boron selective emitter

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters

High-efficiency n-TOPCon bifacial solar cells with selective poly-Si based passivating contacts

High-efficiency N-Topcon Cells Ensured by an Emitter Preparation Process Without Post-Oxidation

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

Fabrication and Detailed Analysis of 22.0% Rear Junction Double-side TOPCon Solar Cell with Front SiOx/Polysilicon Selective Emitter

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Selective tunnel oxide passivated contact on the emitter of large-size n-type TOPCon bifacial solar cells

Novel Tandem Passivated Contact Approach for High-Efficiency Industrial TOPCon Solar Cells

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Impact of boron doping on electrical performance and efficiency of n-TOPCon solar cell

SiOx/polysilicon selective emitter prepared by PECVD-deposited amorphous silicon plus one-step firing enabling excellent J0,met of < 235 fA/cm2 and ρc of < 2 mΩ·cm2

Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application

An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells

Enhancing industrialization TOPCon solar cell efficiency via comprehensive anti-reflection passivation film optimization

Improving the Performance of Industrial TOPCon Solar Cells Through the Insertion of Intrinsic A-Si Layer

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells