Abstract:We report an industrial compatible tunnel oxide passivated contact (TOPCon) structure on solar-grade p-type c-Si wafer as the rear emitter for high-efficiency solar cells, where the ultrathin silicon oxide (SiOx) is made by plasma-assisted oxidation and the P-doped n-type poly-Si (n+-poly-Si) contact layer by plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon (a-Si:H) with in-situ doping with PH3 and following the high-temperature annealing. The fabrication processes of SiOx and n+-poly-Si layers are systematically optimized. It is found that the optimized annealing temperature for the crystallization and dopant activation is in the range of 850 °C and 880 °C, which is higher than the similar structure with chemically oxidized SiOx (820 °C). In addition, the samples made with higher PH3/SiH4 doping ratio during the a-Si:H deposition need a lower annealing temperature to reach the similar dopant distribution within the samples made with lower doping ratio but annealed at higher temperature, it means that the optimized annealing temperature decreases with the increase of the PH3/SiH4 doping ratio during the deposition of a-Si:H precursor. The optimized process with post-hydrogenation yields excellent surface passivation on the p-type Si substrate with the implied open-circuit voltage (iVoc) of ∼742 mV, the single-side saturated recombination current density (J0) of ∼3.0 fA/cm2, the contact resistivity (ρc) of ∼2–4 mΩ cm2, and the effective minority carrier lifetime (τeff) of ∼1050 μs (Δn = 1 × 1015 cm-3). With these passivation parameters, a simulation study demonstrates the advantage of rear emitter over the conventional front emitter TOPCon solar cell with ∼22.8% achievable efficiency on solar-grade p-type wafers with current industrial constraints, and ∼24.9% on high quality p-type c-Si wafers with the optimized conditions in R&D laboratories. Our study suggests that the p-type c-Si solar cell with a rear n+-poly-Si TOPCon emitter is a viable structure for high-efficiency solar cell production.

Optimization of efficiency enhancement of TOPCon cells with boron selective emitter

Study on selective emitter fabrication through an innovative pre‐diffusion process for enhanced efficiency in TOPCon solar cells

Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters

Impact of boron doping on electrical performance and efficiency of n-TOPCon solar cell

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

High-efficiency N-Topcon Cells Ensured by an Emitter Preparation Process Without Post-Oxidation

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

High-efficiency n-TOPCon bifacial solar cells with selective poly-Si based passivating contacts

Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste

Selective tunnel oxide passivated contact on the emitter of large-size n-type TOPCon bifacial solar cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Laser Doping Selective Emitter with Thin Borosilicate Glass Layer for N-Type TOPCon C-Si Solar Cells

SiOx/polysilicon selective emitter prepared by PECVD-deposited amorphous silicon plus one-step firing enabling excellent J0,met of < 235 fA/cm2 and ρc of < 2 mΩ·cm2

Laser Doping Selective Emitter with Thin Borosilicate Glass Layer for N-Type Topcon Solar Cells

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Fabrication and Detailed Analysis of 22.0% Rear Junction Double-side TOPCon Solar Cell with Front SiOx/Polysilicon Selective Emitter

Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact

An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells

Investigation of the Ag–Si contact characteristics of boron emitters for n‐TOPCon solar cells metallized by laser‐assisted current‐injection treatment

Bathocuproine:Ag Complex Functionalized Tunneling Junction for Efficient Monolithic Perovskite/TOPCon Silicon Tandem Solar Cell

Investigation on Effects of the Laser‐Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n‐TOPCon Solar Cell