Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact
Yuqing Huang,Mingdun Liao,Zhixue Wang,Xueqi Guo,Chunsheng Jiang,Qing Yang,Zhizhong Yuan,Dandan Huang,Jie Yang,Xinyu Zhang,Qi Wang,Hao Jin,Mowafak Al-Jassim,Chunhui Shou,Yuheng Zeng,Baojie Yan,Jichun Ye
DOI: https://doi.org/10.1016/j.solmat.2019.110389
IF: 6.9
2020-05-01
Solar Energy Materials and Solar Cells
Abstract:<p>We develop a plasma-assisted nitrous-oxide (N<sub>2</sub>O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO<sub>x</sub>) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO<sub>x</sub> into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO<sub>x</sub> on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO<sub>x</sub>. Champion implied open-circuit voltage (i<em>V</em><sub>oc</sub>) and single-sided recombination saturated current <em>(J</em><sub>0</sub>) reach 730 mV and 4.3 fA/cm<sup>2</sup> after crystallization; and they are further improved to 747 mV and 2.0 fA/cm<sup>2</sup> (3 × 10<sup>15</sup>cm<sup>−3</sup>) after subsequent AlO<sub>x</sub>/SiN<sub>x</sub> hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO<sub>x</sub> ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO<sub>x</sub> (NAOS) ranges 1.3–1.8 nm. The contact resistivity (<em>ρ</em><sub>c</sub>) is typically <10 mΩ cm<sup>2</sup> with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO<sub>x</sub> and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.</p>
materials science, multidisciplinary,physics, applied,energy & fuels