Abstract:A significant breakthrough in fabricating the critical tunnel oxide layer of tunnel oxide passivated contacts (TOPCon) solar cells by using an innovative tube‐type industrial plasma‐assisted atomic layer deposition (PEALD) method is reported. Extremely low recombination current densities down to 2.8 fA/cm2 and an implied open‐circuit voltage (iVoc) as high as 759 mV are achieved, comparable with state‐of‐the‐art laboratory results. The newly developed PEALD SiOx method opens up a promising new route toward mass production of high‐efficiency industrial TOPCon solar cells. In this work, we report on a significant breakthrough in fabricating the critical tunnel oxide layer of tunnel oxide passivated contacts (TOPCon) high‐efficiency solar cells compatible with high‐volume manufacturing. We show that the tunnel oxide can be controlled at the atomic scale, enabled by an innovative tube‐type industrial plasma‐assisted atomic layer deposition (PEALD) method. In combination with an in situ doped poly‐Si (n+) layer grown by plasma‐enhanced chemical vapor deposition, a uniform, ultrathin ~1.3 nm SiOx layer is obtained at the c‐Si/SiOx/poly‐Si (n+) interface. Extremely low recombination current densities down to 2.8 fA/cm2 and an implied open‐circuit voltage (iVoc) as high as 759 mV are achieved, comparable to state‐of‐the‐art laboratory results. The developed tube‐type PEALD SiOx is applied to industrial TOPCon solar cells resulting in a solar cell efficiency and open‐circuit voltage of up to 24.2% and 710 mV, respectively. The tunnel oxide process window is about 2.4 Å, highlighting the importance of precisely controlling the tunnel oxide thickness at the atomic scale for TOPCon solar cells. The newly developed tube‐type industrial PEALD SiOx method opens up a promising new route toward mass production of high‐efficiency industrial TOPCon solar cells. Furthermore, the developed tube‐type PEALD method can easily be integrated with the industrial tube‐type plasma‐enhanced chemical vapor deposition (PECVD) method, thus enabling the deposition of all thin film layers in TOPCon solar cells in one integrated PEALD/PECVD system. This significantly simplifies manufacturing complexity and fosters the commercialization of next‐generation high‐efficiency industrial TOPCon solar cells.

Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells

24.4% industrial tunnel oxide passivated contact solar cells with ozone-gas oxidation Nano SiOx and tube PECVD prepared in-situ doped polysilicon

Tunnel Oxide Deposition Techniques and Their Parametric Influence on Nano-Scaled SiOx Layer of TOPCon Solar Cell: A Review

Plasma Treatment for Chemical SiOx Enables Excellent Passivation of P-Type Polysilicon Passivating Contact Featuring the Lowest J0 Of-6 Fa/cm2

Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2

Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

A silicon oxide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 23%

Regionalizing Nitrogen Doping of Polysilicon Films Enabling High‐Efficiency Tunnel Oxide Passivating Contact Silicon Solar Cells

Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts

Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

Nanoscale SiOx Tunnel Oxide Deposition Techniques and Their Influence on Cell Parameters of TOPCon Solar Cells

Unraveling the Passivation Mechanisms of C-Si/Siox/Poly-Si Contacts

Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

Highly transparent oxygen‐doped poly‐Si with in‐situ N2O oxidant for poly‐Si passivating contacts in perovskite/silicon tandem solar cells

Atomic scale controlled tunnel oxide enabled by a novel industrial tube‐based PEALD technology with demonstrated commercial TOPCon cell efficiencies > 24%

Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells

Effect of plasma-assisted N 2 O/Ar oxidation on TOPCon solar cells

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer