Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

An Industrial Solution to Light-Induced Degradation of Crystalline Silicon Solar Cells

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells

Study on Permanent Deactivation of the Light-Induced Degradation in P-Type Compensated Crystalline Silicon Solar Cells

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells

Research on the Boron Contamination at the P/i Interface of Microcrystalline Silicon Solar Cells Deposited in a Single PECVD Chamber

Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts

Boron Spin-On Doping for Poly-Si/SiO x Passivating Contacts

Impact of Boron Doping Concentration on Tunnel Oxide Passivated Contact in Front Surface for N-Type Poly-Si Based Passivated Contact Bifacial Solar Cells

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells

UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

Passivation properties of tunnel oxide layer in passivated contact silicon solar cells