Abstract:a-Si:H/SiO2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350 degrees C to 1100 degrees C in N2 ambient with an increment of 100 degrees C. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si–O stretching vibration of SiO2 layers shift to 1087cm−1 after annealing at 1100 degrees C, which demonstrates that the SiO2 films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si–O vibration from interfacial SiOx was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiOx networks. The H-related bonds were observed in the form of H–Si–O3 and H–Si–Si3−nOn (n=1–2) configurations, which are supposed to be present in SiO2 and interfacial SiOx layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies.

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

The effect of post-treatments on crystallization in a-Si:H/a-SiNx:H multilayers

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Study on solid-phase crystallization of B-doped a-Si:H film

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film

Crystallization of Amorphous SiC and Superhardness Effect in CrAlN/SiC Nanomultilayered Films

Crystallization of As-Deposited Amorphous Silicon Films on Glass Prepared by Magnetron Sputtering with Different Substrate Biases and Temperatures

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Influence Of Thermal Treatments On The Crystallisation Of Lpcvd-Deposited Si Thin Films

Effects of high-temperature annealing on the structure of reactive sputtering a-SiC:H films

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Double Effects of Atomic Hydrogen Anneal on the Microstructure of Hydrogenated Amorphous Silicon Films

Effect of oxide layer on Al-induced crystallization of amorphous Si1−xGex thin films

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process