Abstract:Al2O3/ZnO nanolaminates are promising nanocomposites with special properties for the applications of oxide -based thin-film transistors, photoluminescence devices, and pitch grating references. In this study, Al2O3/ZnO nanolaminates were grown at 80 degrees C, 120 degrees C, 250 degrees C by atomic layer deposition, and then post-annealed by furnace annealing at 600 degrees C, 700 degrees C, 800 degrees C respectively. Both the in-situ growth temperature and post-annealing temperature-induced microstructures of Al2O3/ZnO nanolaminates were examined using x-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). In addition, the interfacial diffusion and solid-state reaction were systematically studied by high-resolution transmission electron microscopy (HRTEM). The films grown at 80 degrees C and 250 degrees C show a typical polycrystalline structure, while the film grown at 120 degrees C possesses an obvious preferred orientation. After post-annealing at 700 degrees C, the spinel ZnAl2O4 grains are formed at the interface of the Al2O3/ZnO films grown at 80 degrees C and 250 degrees C, which indicates the solid-state re-action has occurred, but this phenomenon did not occur for the films grown at 120 degrees C. The results indicate that the growth temperature not only affects the crystallinity and preferred orientation of the ZnO interlayers, but also the interfacial diffusion and counter-diffusion of atoms, and thereby the solid-state reaction, in the post -annealing process. So, simultaneously controlling the effects of the growth and post-annealing temperatures has great significance for this kind of nanolaminates.

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

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Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Annealing effect on structures and luminescence of amorphous SiN films

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar ( 11 2 ̄ 2 ) AlGaN films

Effect of Annealing on SiC Thin Films Prepared by Pulsed Laser Deposition

Annealing Modulated Microstructural and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition-Derived HfO2/SiO2 Nanolaminates on AlGaN/GaN

Annealing effect for surface morphology and luminescence of ZnO film on silicon

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Interfacial and Microstructural Changes of the Al2O3/ZnO Multilayer Films Induced by In-Situ Growth and Post-Annealing Temperatures

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing