Abstract:Because of the precise control of film thickness, atomic layer deposition (ALD) offers significant advantages in fabricating high-quality superlattice films. For the first time, a SiNx/SiO2 superlattice with an ultrathin SiNx sublayer layer (1.5 nm) and a SiO2 barrier layer (3 nm) was successfully fabricated using plasma-enhanced ALD. Transmission electron microscopy (TEM) measurements demonstrate the maintenance of multilayer structures with smooth interfaces. Next, the annealing effect on the microstructural, optical, and chemical properties of these SiNx/SiO2 superlattice structures was thoroughly investigated. With increasing annealing temperature, X-ray reflection (XRR) and TEM measurements revealed consistent changes in interface, morphology, roughness, density, and thickness. After high-temperature annealing, Fourier-transform infrared spectroscopy (FTIR) measurements combined with X-ray photoelectron spectroscopy (XPS) measurements revealed significant reductions in Si–H-related defects and absorption bands. Photoluminescence (PL) was used to characterize the light emission property, and it was discovered that increasing the annealing temperature decreased the PL peak intensity at ∼550 and 900 nm. The silicon nanocrystals (Si–NCs)-related PL peak (∼900 nm) became dominant as the annealing temperature increased. The findings in this paper shed light on the annealing effect on the new superlattice material prepared via ALD. Improved PL properties of this type of superlattice are expected and can be obtained in future research by optimizing the ALD deposition process and annealing parameters.

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

The effect of post-treatments on crystallization in a-Si:H/a-SiNx:H multilayers

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

Study on solid-phase crystallization of B-doped a-Si:H film

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments