Abstract:We report a new method of preparing patterned nano-crystalline Si (nc-Si) by pulsed laser interference crystallization of a- Si:H thin films. A KrF excimer pulsed laser with wavelength 248 nm and pulse duration 30 ns is employed as a coherent ultra-violet beam source; a one-/two-dimensional (1D/2D) silica phase-shifting grating is used to form a high-contrast laser interference pattern behind it. During the laser treatment, the a-Si:H film is placed behind near contact with the phase grating. A transient thermal 1D/2D grid is then directly formed on the sample, leading to the local crystallization of the a-Si:H films and forming of nano- crystalline Si. The crystallinity of nc-Si films is verified by Raman scattering. Atomic force microscopy clearly shows a morphology of 1D/2D regular sub-micron patterns formed by locally crystallized stripes/dots, which are composed of densely gathered crystallites with a lateral size of approximately 50 - 100 nm and a height of approximately 10 - 20 nm. The interfaces between the crystallized and the amorphous zones are abrupt. Transmission electron micropsy demonstrates a lateral size distribution of nc-Si within the crystallized zones. This new approach has a potential application in the nano-electronics and nano-optoelectronics.

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Patterned Distribution Of Silicon Nanocrystals Prepared By Pulsed Laser Interference Crystallization Of An Ultrathin A-Si : H Single Layer

Two-Dimensional Patterned Nanocrystalline Si Array Prepared by Laser Interference Crystallization of Ultra-Thin Amorphous Si : H Single-Layer

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

Patterned structures of silicon nanocrystals prepared by laser annealing