Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

XinFan Huang,Feng Qiao,Xiaowei Wang,Wei Li,Hecheng Zhou,Kunji Chen

2004-01-01

Abstract:We report a method of direct formation of two-dimensional (2D) or three-dimensional (3D) patterned structures of silicon nanocrystals (nc-Si). The technique is based oil the laser interference crystallization (LIC) in ultra-thin a-Si:H single-layer (< 10 nm) or a-Si:H/a-SiNx multilayers. Upon laser irradiation a transient thermal 2D pattern are directly formed on the surface of sample. Si nanocrystals are directly formed in the discal regions which are patterned. Each discal region is with the diameter of less than 300 nm and the height of about the same as the thickness of a-Si:H layer. For the multilayer samples, we not only get 2D patterned distribution of nc-Si in a-Si:H sublayers, but also in the growing direction of the sample we get ordered distribution of nc-Si with the same periodicity as that of multilayers.