Abstract:Recent work on laser-induced crystallization of thin films and nanostructures is presented. Characterization of the morphology of the crystallized area reveals the optimum conditions for sequential lateral growth in a-Si thin films under high-pulsed laser irradiation. Silicon crystal grains of several micrometers in lateral dimensions can be obtained reproducibly. Laser-induced grain morphology change is observed in silicon nanopillars under a transmission electron microscopy (TEM) environment. The TEM is coupled with a near-field scanning optical microscopy (NSOM) pulsed laser processing system. This combination enables immediate scrutiny on the grain morphologies that the pulsed laser irradiation produces. The tip of the amorphous or polycrystalline silicon pillar is transformed into a single crystalline domain via melt-mediated crystallization. The microscopic observation provides a fundamental basis for laser-induced conversion of amorphous nanostructures into coarse-grained crystals. A laser beam shaping strategy is introduced to control the stochastic dewetting of ultrathin silicon film on a foreign substrate under thermal stimulation. Upon a single pulse irradiation of the shaped laser beam, the thermodynamically unstable ultrathin silicon film is dewetted from the glass substrate and transformed to a nanodome. The results suggest that the laser beam shaping strategy for the thermocapillary-induced de-wetting combined with the isotropic etching is a simple alternative for scalable manufacturing of array of nanostructures.

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

NcSi/SiO2 Multilayer Prepared by the Method of Laser Constrained Crystallization

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Three-Dimensional Ordered Nano-Crystalline Si Made by Pulsed Laser Interference Crystallization of A-Si : H/A-Sinx : H Multilayers

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si : H Single-Layer

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Nanocrystalline silicon films prepared by laser-induced crystallization

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

Laser Processing and In-Situ Diagnostics for Crystallization: from Thin Films to Nanostructures

Laser Crystallization of A-Si:H/A-Sinx:H Multilayers