Abstract:The effect of rapid thermal processing (RTP) on the oxygen precipitation occurring at 1050degreesC in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050degreesC in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050degreesC anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatment will dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050degreesC anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050degreesC anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.

Amorphous Siox Nanowires Grown on Silicon(100) Substrates Via Rapid Thermal Process of Nanodiamond Films

Ultrafast growth of single-crystalline Si nanowires

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Rapid-Heating-Triggered in Situ Solid-State Transformation of Amorphous TiO2 Nanotubes into Well-Defined Anatase Nanocrystals

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Tiny silicon nano-wires synthesis on silicon wafers

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Silicon nano-wires grown at low temperature

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Rational growth of highly oriented amorphous silicon nanowire films

Growth of Nickel Films on the Surface of Silicon Nanowire

Preparation and Characterization of Amorphous Siox Nanowires